Nadine Collaert
Nadine Collaert is program director at imec and responsible for the High-speed analog/RF program. She received an M.S. and Ph.D. degree in electrical engineering from the ESAT Department, KU Leuven, Belgium, in 1995 and 2000, respectively. Since then, she has been involved in the theory, design and technology of FinFET devices, emerging memory devices, transducers for biomedical applications and the heterogeneous integration of new materials with Si.
Authored articles
Meet imec fellow Nadine Collaert
“To all the talented female researchers out there: make your voices heard loud and clear. Your ideas and insights matter.”
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Scaling up GaN- and InP-based technologies for 5G and 6G wireless communication
GaN HEMTs and InP HBTs: integration on a Si platform and co-integration with CMOS components Keep me informed about imec's beyond 5G activities
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Heterogeneous integration technologies to enable the next generation of wireless 6G
InP shows promise to power 6G technology. Heterogeneous integration is key to its advancement, co-integrating all components into a cohesive system. Keep me informed about imec's beyond 5G activities
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Heterogeneous III-V/CMOS technologies for beyond-5G RF front-end modules
Keep me informed about imec's beyond 5G activities
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The potential of sequential-3D integration for advanced semiconductor scaling
Sequential-3D integration is perceived as a promising alternative to continue the benefits offered by semiconductor scaling. Nadine Collaert (distinguished member of technical staff at imec) and her team review the technology integration challenges and the potential benefits of this emerging integration technology.
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Tackling the challenges of 5G with hybrid III-V/Si technology
Imec has recently launched ‘High-speed analog/RF’, a new Industrial Affiliation Program set up to develop 5G RF front-end technologies for mobile handsets. Together with material and equipment suppliers, IDMs, foundries and system companies, the program will take RF beyond the speed and power limits of CMOS technologies. Nadine Collaert, distinguished member of technical staff at imec and responsible for the High-speed analog/RF program, explains.
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The vertical nanowire FET: enabler of highly dense SRAMs
Gate-all-around nanowire field effect transistors (FETs) in a vertical configuration bring many opportunities, such as the 'super-scaling' of SRAM memory cells.
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