Meet imec fellow Stefaan Decoutere

“Don’t only work out a topic in depth – develop a broad skillset that helps to put your work in a broader context”

Portrait of imec fellow Stefaan Decoutere in a blue sweater and glasses

In short

  • Obtained a PhD at KU Leuven in 1992
  • Joined imec in 1987
  • Became head of the Mixed Signal/RF technology group in 1998
  • Appointed as manager of GaN power device technology in 2010
  • In 2015, was promoted to director of GaN technology program
  • Named imec fellow in 2023

With a career spanning over three decades, Stefaan Decoutere left a strong mark on the field of electronics, particularly in gallium nitride (GaN) technology and power electronics. He started his imec journey as a PhD student in 1987. In 1998, he became head of the Mixed Signal/RF group. Since 2010, his work revolves around GaN Power Electronics. First as a manager, now as the director of imec’s GaN Power Electronics program. His imec voyage is characterized by memorable highlights, exciting future prospects, and invaluable advice to young researchers.

Three highlights in more than thirty years of imec

Stefaan’s career took a first turn in 1987. “The first highlight is simply joining imec, which is an amazing research institute with a great infrastructure. I started working on Bipolar-CMOS-DMOS (BCD) technology – a form of smart power tech.” That decision shaped his career, leading him away from digital technology, logic, or memory towards the fascinating areas of analog, radiofrequency (RF) and power technologies.

He was involved in developing BiCMOS technology, ranging from the 0.5-micron node to the 0.13-micron node. His collaboration with leading companies in the development of silicon germanium, silicon germanium carbon, and complementary BiCMOS technology resulted in enduring process transfers that continue to yield legacy products.

Transitioning further into RF and analog CMOS, Decoutere lead two excellent projects. “As a second highlight, there were two outstanding projects. The first was the Impact Project on 90nm RF CMOS technology and the Nano RF Project on FinFET technology. In those projects, we had an intense and productive collaboration with the imec design teams that resulted in more than 100 demonstrator circuits that have been fabricated and tested, some showing record performances.”

The third highlight involved Decoutere’s steps towards GaN technology. “I was asked to join imec’s GaN activities, first as a group leader and then as a program director. With the team, we were able to push the GaN technology to a readiness level that enabled process transfers for many different voltage ranges.”

Driven by pushing technologies to the next level

The final highlight can also be found in one of Stefaan’s drivers. Enabling a groundbreaking technology level in the GaN area, has proven to be highly satisfying. “We’ve been able to push several technologies to a technology readiness level where we could transfer them to partners, see them being implemented in their fabs, and help to ramp up their volume production. We have, for instance, transferred our GaN technology to a fab that’s producing more than 10,000 wafers per month.”

Innovation through collaboration is a second driver. “Making fully functional demonstrator circuits also drives me. I find it very rewarding to see good performance of sophisticated circuits in a joined effort between design teams and technology development teams.”

Aspirations as imec fellow

As an imec fellow, Stefaan is now looking beyond his tasks as program director in GaN Power Electronics. In particular, Stefaan wants to focus on two responsibilities. The first impacts a local scale. “I would like to work with teams to coach either the individuals or the team as a whole. I would help them by giving them advice, looking for alternative solutions, and sketching the bigger picture in which their work is centered.”

“Secondly, I would like to work further towards a strategic vision for the GaN program for the next 5 to 10 years. And create a solid IP basis, so we have the freedom to operate towards/for the valorisation of our results.”

A message to junior researchers

Stefaan’s aspirations as an imec fellow correspond to the advice he would like to share with upcoming researchers and students. “Don’t only work out a specific topic in depth but try to build up a broad skillset. That skillset will help you to put your work in a broader context – even if you’re more specialized. It could also help you to develop the talents you need to become a team leader or project manager.”
 

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Authors

Stefaan Decoutere portrait in front of a modern glass building

Stefaan Decoutere

Program director gallium nitride (GaN) and power electronics
Author

Stefaan Decoutere received the M.Sc. degree in electronic engineering and the Ph.D. degree from the Katholieke Universiteit Leuven, Belgium, in 1986 and 1992 respectively. He is with imec, Leuven, since 1987, where he started in high-voltage BCD technology development. From 1992 till 1997, he was in charge of the development of high-speed BiCMOS and SiGe HBT technologies. In 1998, he became the head of the mixed signal/RF technology group in imec. Since 2010 he manages the GaN power device technology development, and in 2015 he became the director of the GaN technology program. 
 

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