Imec’s 200mm GaN-on-Si e-mode power devices withstand heavy ion and neutron irradiation

07/03/2017
GaN

Radiation hardness of e-mode devices confirm maturity of imec’s 200mm GaN-on-Si platform

Probe needles testing a patterned semiconductor wafer on a wafer probe station

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Groene lichtpuntjes verspreid over horizontale lagen, als een abstract beeld van vloeistofgeheugen

Unlocking the full potential of GaN technology for next-gen power electronics

16/02/2026
Page-turner
GaN
Sustainable development
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Abstract close-up of a semiconductor circuit board with glowing traces and bokeh lights

Gallium-nitride power devices

Page
GaN
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300mm GaN-on-silicon wafer viewed from above

Imec launches 300mm GaN program to develop advanced power devices and reduce manufacturing costs

06/10/2025
press release
GaN
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City skyline at dusk overlaid with a glowing network globe

DC Reliability of high-κ GaN-on-Si MOS-HEMTs for mm-Wave Power Amplifiers

12/03/2025
Longread
GaN
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Large semiconductor wafer beside a small comparison wafer, illustrating InP scale-up on silicon

Scaling up GaN- and InP-based technologies for 5G and 6G wireless communication

26/06/2023
Longread
Beyond 5G
GaN
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Person using a smartphone in front of blurred 5G antenna towers

GaN-based devices for advanced RF applications: a technology building block in the spotlight

18/04/2023
Research update
Connectivity
GaN
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Close-up of a GaN transistor layout with source, gate and drain regions and a 350 µm scale bar.

Monolithic integration of GaN components boosts power integrated circuits

16/03/2022
Research update
GaN
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Scanning electron micrograph of layered GaN device structures on a chip

Imec demonstrates successful monolithic integration of Schottky diodes and depletion-mode HEMTs with 200 V GaN-IC

13/12/2021
press release
GaN
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Abstract close-up of a semiconductor wafer pattern with a visible imec watermark

Imec and Europractice announce winners of 2021 GaN-IC technology design contest

19/10/2021
press release
GaN
EU-funded
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