Sebastien Couet

Program Director Magnetics at imec
Author

Sebastien Couet received his PhD in physics from the University of Hamburg, Germany, in 2008. From 2009 to 2014, he was a postdoctoral fellow at the Katholieke Universiteit Leuven, Belgium, where he specialized in the interface physics of magnetic/oxide heterostructures. In 2014, he joined imec, Leuven, where he is currently the program director for magnetics. In this role, he oversees the development of the various MRAM-based memory concepts for embedded and standalone applications and other exploratory magnetic device concepts.

Portrait of Sebastien Couet in a blue shirt, standing in front of a blurred glass building interior

Authored articles

Groene lichtpuntjes verspreid over horizontale lagen, als een abstract beeld van vloeistofgeheugen

Novel SOT-MRAM architecture opens doors to high-density last-level cache memory applications

16/02/2023
Research update
Memory & storage

First demonstration of field-free, gate-voltage assisted SOT-based switching operation in a multi-pillar configuration

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Block diagram of an optoelectronic transceiver with DSP, driver, modulator, receiver and optical input/output

Through the EU SPEAR project, imec offers training on SOT-MRAM: emerging memory for microcontrollers and embedded systems

19/09/2022
Research update
Memory & storage

From October 3 to 5, imec organized a hybrid (offline/online) training on SOT-MRAM technology for memory, from fundamentals to materials to integration and circuit design challenges. The content remains available through imec.academy and is suitable for any profile that relates to magnetics, emerging memories and magnetic memories in general and is suitable both to master level students up to trained experts that want to have a deep insight in upcoming technologies.

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Imec cleanroom with semiconductor processing equipment under bright ceiling lights

MRAM technologies: from space applications to unified cache memory?

29/09/2021
Longread
Memory & storage

Towards CMOS-compatible fabrication of STT-, SOT-, VCMA-, VG-SOT- and domain-wall flavors of MRAM

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