Jan Van Houdt
Jan Van Houdt received a Ph.D. from the KU Leuven. During his PhD work, he invented the HIMOS™ Flash memory, which he transferred to several industrial production lines. In 1999, he became responsible for Flash memory at imec and as such was the driving force behind the expansion of imec’s Industrial Affiliation Program on Memory Technology. Jan has published more than 300 papers in international journals and accumulated more than 250 conference contributions (incl. ~50 invitations and 5 best paper awards). He has filed about 80 patents and served on the program and organizing committees of 10 major semiconductor conferences. In 2014, he received the title of IEEE Fellow for his contributions to Flash memory devices. In the same year, he started the Ferroelectrics program at imec and became a guest professor at the KU Leuven teaching on CMOS and memory technology. Today, he is Scientific Director at imec, active both in the memory as well as in the logic scaling programs.
Authored articles
A non-destructive readout mechanism for ferroelectric capacitors
The demonstration of a non-destructive read operation for FeCAPs presents a milestone towards compute-in-memory applications
Read more
A non-destructive readout mechanism for ferroelectric capacitors
The demonstration of a non-destructive read operation for FeCAPs presents a milestone towards compute-in-memory applications
Read more
Meet imec fellow Jan Van Houdt
“Learn from the outliers in your work and try to be one yourself sometimes.”
Read more
3D NAND flash and FeFET in the data storage roadmap
3D NAND flash continues to be the industry’s answer to the ever-increasing demand for high-density data storage technology. At the same time, the storage market is branching off into low(er)-latency segments. This gives rise to faster versions of 3D NAND and gradually to the ferroelectric field effect transistor (FeFET). In this article, Maarten Rosmeulen, program director of storage memory and Jan Van Houdt, program director of ferroelectrics at imec and professor at the physics and astronomy department of the KU Leuven, review the data storage roadmap. They discuss recent progress in 3D (gate-all-around) NAND Flash, which allows the technology to advance towards terabit/mm2 bit storage density. They also explain how FeFET fits in the future low-latency storage market segment, and discuss the challenges ahead.
Read more