Shane (Shih-Hsiang) Lin

PhD student at imec and VUB
Author

Shih-Hsiang Lin received his B.Sc. degree in electrical engineering from National University of Kaohsiung (NUK), Kaohsiung, Taiwan, in 2018, and his M.Sc. degree from National Cheng Kung University (NCKU), Tainan, Taiwan, in 2021. In addition, he spent one year as an intern at imec in 2021. He joined the department of electronics and informatics (ETRO) at the Vrije Universiteit Brussel (VUB) and the Electrostatic discharge (ESD) team at imec, Belgium, in 2021, where he is pursuing his PhD degree. His current research topic is ESD risk investigation in three-dimensional (3D) technologies.

Portrait of Shane Lin wearing glasses and a dark shirt, standing in front of a blurred glass building

Authored articles

Microscope close-up of stacked transistor structures in a CFET device cross-section

Towards efficient ESD protection strategies for advanced 3D systems-on-chip

26/07/2024
Longread
3D integration

Guidelines for protecting the internal I/O interfaces from electrostatic discharge during die or wafer bonding steps

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