Maarten Rosmeulen
Maarten Rosmeulen received his M.Sc. degree in physics in 1993 and his M.Sc. degree in physics of micro-electronics and materials science in 1994, both from the KU Leuven, Belgium. In 2005, he received his Ph.D. in electrical engineering from the KU Leuven. Since then, he has been with imec, in Leuven, Belgium, where he has been active as an R&D engineer in process integration, semiconductor device design, and electrical device characterization for multiple internal and external projects. In 2009 he became a project leader in developing GaN-on-Silicon Light Emitting Diodes (LEDs). In 2014 he became the team leader of the Pixel Design and Testing team and has been responsible for the development of CMOS Image Sensor (CIS) technologies. In 2019 he became the program director of the Storage Memory program, the position he holds today.
Authored articles
Unlocking z-pitch scaling for next-generation 3D NAND flash
Airgap integration and charge trap layer separation: critical technologies for increasing the number of word-line layers
Read moreA novel 3D buffer memory for AI and machine learning
A 3D charge-coupled device with IGZO channel: a promising CXL type-3 buffer memory
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Imec improves memory window of a 3D trench cell for next-gen NAND Flash
The results mark a milestone in enabling ultrahigh-density trench-based 3D NAND Flash memories
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Exploring liquid-based memories for ultrahigh-density storage applications
The potential of colloidal and electrolithic memories for nearline storage
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3D NAND flash and FeFET in the data storage roadmap
3D NAND flash continues to be the industry’s answer to the ever-increasing demand for high-density data storage technology. At the same time, the storage market is branching off into low(er)-latency segments. This gives rise to faster versions of 3D NAND and gradually to the ferroelectric field effect transistor (FeFET). In this article, Maarten Rosmeulen, program director of storage memory and Jan Van Houdt, program director of ferroelectrics at imec and professor at the physics and astronomy department of the KU Leuven, review the data storage roadmap. They discuss recent progress in 3D (gate-all-around) NAND Flash, which allows the technology to advance towards terabit/mm2 bit storage density. They also explain how FeFET fits in the future low-latency storage market segment, and discuss the challenges ahead.
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