Hao Yu
Hao Yu was born in Jinan, China. He received his B.S. and M.S. degrees in Microelectronics and Solid-State Electronics from Fudan University in 2010 and 2013, respectively. He received the China national graduate student scholarship award and Shanghai excellent graduate student award in 2013. Hao Yu is now a PhD candidate affiliated to imec and Katholieke Universiteit Leuven under supervision of Dr. Marc Schaekers, Dr. Nadine Collaert and Prof. Kristin De Meyer. He has been working on metal-semiconductor contact resistances and semiconductor junction characterizations. As high contact resistances become major obstacles that compromise performance of modern CMOS devices, Hao Yu has developed high-accuracy test vehicles and reported multiple contact schemes meeting the 10–9Ωcm2-contact-resistivity industrial target. He has authored and co-authored 17 articles to peer reviewed journals and 16 to international conferences. He received the IEEE electron device society PhD student fellowship award in 2017, the imec PhD student excellence award in 2018, and the China scholarship council award for outstanding self-financed students abroad in 2018. Since September 2018, Hao Yu has joined Dr. Niamh Waldron’s team at imec as a researcher working on IIIV-on-Si RF technologies.

Authored articles

GaN-based devices for advanced RF applications: a technology building block in the spotlight
Study unveils the mechanism behind ion implantation isolation of GaN HEMTs. Keep me informed about imec's beyond 5G activities
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Solving the contact resistance challenge for 7nm and beyond CMOS
With the development of novel titanium-silicidation techniques, imec PhD student Hao Yu presents improved source/drain contact schemes which help solving the contact resistance challenge for advanced CMOS technologies.
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