Pierre Boulenc

Pierre Boulenc was born in Grenoble (France) on September the 20th, 1978. He received a Solid-State Physics Master’s degree at “Université Paris VII” (2003) and a Material Science PhD degree in “Université des Sciences et Technologies de Lille” (2007) in France. From 2006 to 2013, he was responsible for TCAD simulations in the framework of CMOS Image Sensors, bipolar transistors, process and device modeling calibration at STMicroelectronics Crolles (France). In 2013, Pierre joined Imec in Leuven (Belgium) as R&D engineer. His work has been focused on CCD-in-CMOS pixel design and test as well as the exploration of novel pixel architectures by means of TCAD simulations. He is now leading the Pixel Devices team at Imec.