Peter De Bisschop
Peter De Bisschop has a PhD degree in Physics from Leuven University. He moved to imec in 1986, where he joined the lithography group in 1995. He worked on various topics related to exposure-tool-control and -qualification, imaging, masks, rigorous simulations, OPC, and DTCO. His focus in the past few years has been on stochastic effects in EUV.
Authored articles
Sailing along the stochastic cliffs
Imec takes a great leap forward in understanding and pushing the limits of extreme ultraviolet lithography – part II
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Imec pushes the limits of EUVL single exposure for future logic and memory
Imec has made considerable progress towards enabling extreme ultraviolet lithography (EUVL) single exposure of N5 32nm pitch metal-2 layers and of 36nm pitch contact holes. Greg McIntyre, Peter De Bisschop, Danilo De Simone, Frederic Lazzarino and Victor Blanco from the imec patterning team explain some of the key steps and highlight the impact on the semiconductor industry. The results have been presented in multiple papers at the 2018 SPIE Advanced Lithography Conference.
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