Nicolo Ronchi
Nicolò Ronchi was born in Thiene, Italy. He received the Laurea (master) degree in Electronics Engineering and the Ph.D. degree from the University of Padova, Italy, in 2008 and 2012, respectively. He started to work on GaN-based devices back in 2007 during his master thesis. His research activity on this technology continued during his PhD and, since 2012, in imec Belgium, as researcher in the Power and Mixed Signal Technologies group (PMST). His main interests include the characterization and reliability analysis of GaN-based semiconductor devices for high-frequency and power-switching application.
Authored articles
Packaging solution for GaN-on-200mm Si power devices
Imec and UTAC have developed a unique process for the wafer thinning and backside metallization of highly stressed GaN-on-200mm Si wafers. This has resulted in a packaged 650V GaN device – smaller than state-of-the-art.
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