Geoffrey Pourtois

Geoffrey Pourtois joined imec in 2003 and has been working since then in the field of atomistic modeling, with a special attention for establishing relations between material, interface defects and electrical device performances. He obtained a Ph.D. degree in Chemistry in 2002 from university of Mons Hainaut, Belgium. From 2003 to 2022, he has been building and heading the material simulation and physics group within imec, where he and his team have been focusing on the modeling using atomistic simulations of nanoelectronic related materials, and on complex material gate stacks, touching different aspects bound to it such as the identification of new metal candidates for interconnect, emerging and magnetic memories; 2D materials; doping strategies for transistors; CMOS metal gate work function engineering; identification of transparent amorphous semi-conductors; the modeling of mechanical and thermal properties and the identification of atomic layer deposition precursor for material growth. In 2020, he was nominated imec fellow.