Danilo De Simone
Danilo De Simone is scientific director at imec. He has 25 years of experience in the semiconductor R&D field, and his work has produced over 100 scientific and technical papers in the field of lithographic materials and advanced patterning. Before imec, he worked for STMicroelectronics, Numonyx, and Micron Technology. De Simone is editorial board member of the Journal of Micro/Nanopatterning, Materials, and Metrology (JM3), member of SPIE committee for the Patterning Materials and Processes program and member of the International Advisory Board of the Photopolymer Science and Technology Conference (ICPST).

Authored articles

Removing PFAS from semiconductor manufacturing, from resists to rinses
First results show high-resolution patterns with EUV PFAS-free photoresists.
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High-NA EUV lithography: the next major step forward
In the course of 2025, we expect to see the introduction of the first high-NA extreme ultraviolet lithography (EUVL) equipment in high-volume manufacturing environments. These next-generation lithography systems will be key to advance Moore’s Law towards the logic 2nm technology generation and beyond. In this article, imec scientists and engineers involved in preparing this major engineering project (in partnership with ASML) talk about challenges and opportunities. They highlight recent insights. And they discuss the progress made in developing the patterning processes, metrology and photomasks needed for enabling the high-NA EUV lithography infrastructure.
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Imec pushes the limits of EUVL single exposure for future logic and memory
Imec has made considerable progress towards enabling extreme ultraviolet lithography (EUVL) single exposure of N5 32nm pitch metal-2 layers and of 36nm pitch contact holes. Greg McIntyre, Peter De Bisschop, Danilo De Simone, Frederic Lazzarino and Victor Blanco from the imec patterning team explain some of the key steps and highlight the impact on the semiconductor industry. The results have been presented in multiple papers at the 2018 SPIE Advanced Lithography Conference.
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