Barry O’Sullivan
Barry O’Sullivan is a Principal Member of Technical Staff in the Advanced Reliability Robustness and Testing Department of imec, Leuven, Belgium. He received the Ph.D. (2004) degree from the Tyndall Institute, Cork, Ireland, and performed postdoctoral studies at imec characterizing advanced silicon-based devices, before working with Matsushita Electric on reliability for the 45 / 32 nm CMOS technology nodes. Since 2006, his research topics at imec have included high efficiency silicon photovoltaics, reliability and characterization of advanced devices for logic, photonic and memory applications, and more recently extended to GaN HEMT devices for RF / mm-wave applications.

Authored articles

DC Reliability of high-κ GaN-on-Si MOS-HEMTs for mm-Wave Power Amplifiers
A study on charge trapping and emission
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