Barry O’Sullivan

Principal Member of Technical Staff in the Advanced Reliability Robustness and Testing Department of imec
Author

Barry O’Sullivan is a Principal Member of Technical Staff in the Advanced Reliability Robustness and Testing Department of imec, Leuven, Belgium. He received the Ph.D. (2004) degree from the Tyndall Institute, Cork, Ireland, and performed postdoctoral studies at imec characterizing advanced silicon-based devices, before working with Matsushita Electric on reliability for the 45 / 32 nm CMOS technology nodes. Since 2006, his research topics at imec have included high efficiency silicon photovoltaics, reliability and characterization of advanced devices for logic, photonic and memory applications, and more recently extended to GaN HEMT devices for RF / mm-wave applications.

Portrait of Barry O’Sullivan standing outdoors in front of a glass building.

Authored articles

City skyline at dusk overlaid with a glowing network globe

DC Reliability of high-κ GaN-on-Si MOS-HEMTs for mm-Wave Power Amplifiers

12/03/2025
Longread
GaN

A study on charge trapping and emission

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