Arnaud Furnémont
After a master in electro-mechanics, Arnaud Furnémont completed his PhD at imec, focusing on characterization of nitride-based memory such as NROM and TANOS. In 2008, he joined Intel in Boise (Idaho) and became responsible for 20nm planar Flash reliability, and later for an emerging memory concept. In 2013 he joined imec as memory characterization and integration teams manager. Since end of 2014, Arnaud serves as memory director at imec, with MRAM, RRAM, 3D NAND and ferroelectric memories as main focuses.
Authored articles
A view on the memory and storage technology roadmaps
In this interview, Arnaud Furnémont, Vice President R&D memory and compute at imec, reviews imec’s memory and storage roadmaps and explains how these respond to the industry’s need for ever more memory. He shows how the classical technologies (DRAM and 3D-NAND-Flash) can be pushed to their ultimate limits, and how newcomers (such as ferroelectric memories, various flavors of MRAM and liquid-based concepts) fit in the future memory and storage landscape.
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Getting the most out of your system
Connecting advanced technology options to system-level performance
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Emerging memories for the zettabyte era
The scaling of traditional memories such as SRAM, DRAM and Flash is no longer following the data growth rate, especially in terms of energy and speed. Gouri Sankar Kar, distinguished member technical staff emerging memories, and Arnaud Furnemont, memory director at imec, talk about the future requirements for memory and storage, and give their view on the memory roadmap.
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